Regular biography
Mohamed Missous is Professor of Semiconductor Materials and Devices at the University of Manchester, Department of Electrical Engineering. His research focuses on Molecular Beam Epitaxy of high-speed InP-based transistors, low-temperature THz materials, and sub-millimetre wave Resonant Tunnelling Devices. His team has developed technologies leading to commercialisation by e2V Ltd and other companies. He leads an STFC, Innovate UK, and EPSRC-funded programme in 2DEG Quantum Well Hall Sensors. He has published over 220 papers and received over £10M in funding. He is founder and Technical Director of two companies and is on the advisory board of TechUK. He has held managerial roles at the University and is regularly invited to speak at international conferences.
Scholar-generated biography
Mohamed Missous is a Professor of Semiconductor Materials and Devices, specializing in semiconductor technologies, terahertz (THz) systems, and high-frequency electronics. His research focuses on the development and optimization of semiconductor-based devices for THz emission, microwave detection, and high-speed electronics. Missous has published extensively on photomixers, antennas, and nanoscale semiconductor devices, including self-switching mechanisms and quantum dot-based memory systems. His work also explores the properties of low-temperature-grown materials, such as GaAs and InGaAs, and their applications in THz imaging and sensing. Additionally, he investigates quantum confinement effects, defect behavior, and the thermal stability of semiconductor heterostructures.