Ng Geok Ing

Ng Geok Ing is a professor at Nanyang Technological University, affiliated with the Electrical and Electronic Engineering department. His research focuses on Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs) on Silicon Substrate and III-V Compound Semiconductor Devices for High-Frequency and Monolithic Microwave Integrated Circuit (MMIC) Applications. He can be contacted via email at eging@ntu.edu.sg or through his profile page at https://dr.ntu.edu.sg/entities/person/Ng-Geok-Ing.

Geok Ing Ng is a researcher at Nanyang Technological University specializing in microelectronics and semiconductors. Their work focuses on advanced semiconductor devices, particularly AlGaN/GaN high electron mobility transistors (HEMTs), with an emphasis on improving performance through passivation techniques, gate dielectric materials, and device structure optimization. Ng's research also explores novel materials and fabrication methods for high-frequency and high-power applications, including the development of flexible oxide synaptic transistors for neuromorphic computing. Their contributions span both fundamental studies and practical device engineering, addressing challenges such as surface leakage current, temperature dependence, and microwave noise performance.