Ang Diing Shenp

Ang Diing Shenp is an Associate Professor in the Department of Electrical and Electronic Engineering at Nanyang Technological University. Their research focuses on reliability physics and characterization of nanoscale transistors, nano-characterization techniques, and characterization of novel devices. They can be contacted via email at edsang@ntu.edu.sg or through their profile page at https://dr.ntu.edu.sg/entities/person/Ang-Diing-Shenp.

Ding Shenp Ang is a researcher at Nanyang Technological University, Singapore, focusing on resistive memory, neuromorphic devices, and memory-in-logic devices. His work explores the mechanisms of bias temperature instability and channel hot-carrier effects, which are critical for the reliability of semiconductor devices. Ang's research also investigates the degradation processes in ultrathin gate p-MOSFETs and the role of deep-level hole traps in negative bias temperature instability. Additionally, he has contributed to the development of memristive artificial neuron and synapse devices for neuromorphic electronics. His studies often involve advanced characterization techniques such as X-ray photoelectron spectroscopy and electrical tuning of surface-enhanced Raman scattering.