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Colombo Bolognesi

ETH Zurich · Electrical Engineering
High-performance heterojunction bipolar transistors (HBT) high electron mobility transistors (HEMT)

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Prof. Dr. Colombo Bolognesi is a Professor in the Department of Electrical Engineering at ETH Zurich. His research focuses on high-performance heterojunction bipolar transistors (HBT) and high electron mobility transistors (HEMT). His work is conducted within the Electrical Engineering department at ETH Zurich.


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Prof. Dr. Colombo Bolognesi is a leading researcher in semiconductor devices and mm-wave transistors at ETH Zurich. His work focuses on the development of high-performance heterostructure field-effect transistors (HEMTs) and heterojunction bipolar transistors (HBTs) for millimeter-wave applications. His research explores advanced materials such as GaAsSb, InAs/AlSb, and AlInN/GaN for high-frequency and high-power devices. He has published extensively on topics including transistor modeling, interface roughness scattering, and charge control in quantum wells. His contributions have led to significant advancements in high-electron-mobility transistors (HEMTs) with high cutoff frequencies and output power, making them suitable for THz and millimeter-wave communication systems.

Source: google_scholar · 100 words
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